Journal article


Quasi-freestanding Graphene on SiC(0001)


Publication Details
Author(s): Speck F, Ostler M, Röhrl J, Jobst J, Waldmann D, Hundhausen M, Ley L, Weber HB, Seyller T
Publisher: Trans Tech Publications
Publication year: 2010
Volume: 645-648
Pages range: 629-632
ISSN: 0255-5476
eISSN: 1662-9752

Abstract

We report on a comprehensive study of the properties of quasi-freestanding monolayer and bilayer graphene produced by conversion of the (6√3×6√3)R30° reconstruction into graphene via intercalation of hydrogen. The conversion is confirmed by photoelectron spectroscopy and Raman spectroscopy. By using infrared absorption spectroscopy we show that the underlying SiC(0001) surface is terminated by hydrogen in the form of Si-H bonds. Using Hall effect measurements we have determined the carrier concentration and type as well as the mobility which lies well above 1000 cm2/Vs despite a significant amount of short range scatterers detected by Raman spectroscopy. © (2010) Trans Tech Publications.



How to cite
APA: Speck, F., Ostler, M., Röhrl, J., Jobst, J., Waldmann, D., Hundhausen, M.,... Seyller, T. (2010). Quasi-freestanding Graphene on SiC(0001). Materials Science Forum, 645-648, 629-632. https://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.629

MLA: Speck, Florian, et al. "Quasi-freestanding Graphene on SiC(0001)." Materials Science Forum 645-648 (2010): 629-632.

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