Journal article

The quasi-free-standing nature of graphene on H-saturated SiC(0001)

Publication Details
Author(s): Speck F, Jobst J, Fromm F, Ostler M, Waldmann D, Hundhausen M, Weber HB, Seyller T
Publisher: American Institute of Physics (AIP)
Publication year: 2011
Volume: 9
Pages range: 12206
ISSN: 0003-6951


We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy, we prove that the SiC(0001) surface is saturated with hydrogen. Raman spectra demonstrate the conversion of the buffer layer into graphene which exhibits a slight tensile strain and short range defects. The layers are hole doped (p 5.0 - 6.5 1012 cm -2) with a carrier mobility of 3100 cm2/Vs at room temperature. Compared to graphene on the buffer layer, a strongly reduced temperature dependence of the mobility is observed for graphene on H-terminated SiC(0001) which justifies the term quasi-free-standing. © 2011 American Institute of Physics.

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How to cite
APA: Speck, F., Jobst, J., Fromm, F., Ostler, M., Waldmann, D., Hundhausen, M.,... Seyller, T. (2011). The quasi-free-standing nature of graphene on H-saturated SiC(0001). Applied Physics Letters, 9, 12206.

MLA: Speck, Florian, et al. "The quasi-free-standing nature of graphene on H-saturated SiC(0001)." Applied Physics Letters 9 (2011): 12206.

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