Determination of the Photocarrier Lifetime in Amorphous Silicon with the Moving Photocarrier Grating Technique

Hundhausen M (1994)

Publication Type: Journal article

Publication year: 1994

Journal

Japanese Journal of Applied Physics Japan Society of Applied Physics

Publisher: Japan Society of Applied Physics

Book Volume: 33

Pages Range: L1809

Abstract

In this paper we have determined the lifetime of photogenerated carriers in semiconductors using a technique that does not require time or frequency resolved measurements of the photoconductivity. The lifetime is deduced from the DC-short circuit current that is induced by a laser interference grating of period Λ moving along the semiconductor surface with the velocity vgr. We observe a maximum short circuit current density jsc at a velocity that corresponds to a frequency ω-max$/ = 2πvmax/Λ of the moving interference grating. Based on a theoretical analysis of jsc we show that ω-max$/ equals the inverse of the photocarrier lifetime τ, if the dielectric relaxation-time τdiel is short compared to τ and if the grating period is chosen large compared to the ambipolar diffusion length.

Authors with CRIS profile

Martin Hundhausen Lehrstuhl für Laserphysik

How to cite

APA:

Hundhausen, M. (1994). Determination of the Photocarrier Lifetime in Amorphous Silicon with the Moving Photocarrier Grating Technique. Japanese Journal of Applied Physics, 33, L1809.

MLA:

Hundhausen, Martin. "Determination of the Photocarrier Lifetime in Amorphous Silicon with the Moving Photocarrier Grating Technique." Japanese Journal of Applied Physics 33 (1994): L1809.

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