Hundhausen M (1989)
Publication Type: Journal article
Publication year: 1989
Publisher: Elsevier
Book Volume: 114
Pages Range: 720
DOI: 10.1016/0022-3093(89)90699-6
Hydrogenated amorphous silicon doping superlattices are utilized to obtain a high metastable concentration of spatially separated electrons and holes trapped in their respective band tails. Thermally stimulated conductivity (TSC) experiments show that the thermal energy required to excite carriers to the transport path decreases with increasing concentration of metastable carriers (N
APA:
Hundhausen, M. (1989). Thermally stimulated Conductivity in a-Si:H Doping superlattices. Journal of Non-Crystalline Solids, 114, 720. https://dx.doi.org/10.1016/0022-3093(89)90699-6
MLA:
Hundhausen, Martin. "Thermally stimulated Conductivity in a-Si:H Doping superlattices." Journal of Non-Crystalline Solids 114 (1989): 720.
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