Thermally stimulated Conductivity in a-Si:H Doping superlattices

Hundhausen M (1989)


Publication Type: Journal article

Publication year: 1989

Journal

Publisher: Elsevier

Book Volume: 114

Pages Range: 720

DOI: 10.1016/0022-3093(89)90699-6

Abstract

Hydrogenated amorphous silicon doping superlattices are utilized to obtain a high metastable concentration of spatially separated electrons and holes trapped in their respective band tails. Thermally stimulated conductivity (TSC) experiments show that the thermal energy required to excite carriers to the transport path decreases with increasing concentration of metastable carriers (Nmeta). This is in contrast to IR-photoconductivity data which show a fixed threshold for the excitation of band tail carriers to the mobility edge which does not depend on Nmeta. A model is proposed in which the differences between thermal and optical excitation energies are due to potential fluctuations created by the trapped carriers themselves. © 1989.

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How to cite

APA:

Hundhausen, M. (1989). Thermally stimulated Conductivity in a-Si:H Doping superlattices. Journal of Non-Crystalline Solids, 114, 720. https://dx.doi.org/10.1016/0022-3093(89)90699-6

MLA:

Hundhausen, Martin. "Thermally stimulated Conductivity in a-Si:H Doping superlattices." Journal of Non-Crystalline Solids 114 (1989): 720.

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