Connection of anisotropic conductivity to tip-induced space-charge layers in scanning tunneling spectroscopy of p-doped GaAs
Loth S, Wenderoth M, Ulbrich RG, Malzer S, Döhler G (2007)
Publication Type: Journal article, Original article
Publication year: 2007
Journal
Original Authors: Loth S., Wenderoth M., Ulbrich R.G., Malzer S., Dohler G.H.
Publisher: American Physical Society
Book Volume: 76
Article Number: 235318
Journal Issue: 23
DOI: 10.1103/PhysRevB.76.235318
Abstract
The electronic properties of shallow acceptors in p -doped GaAs{110} are investigated with scanning tunneling microscopy (STM) at low temperature. Shallow acceptors are known to exhibit distinct triangular contrasts in STM images for certain bias voltages. Spatially resolved I (V) spectroscopy is performed to identify their energetic origin and behavior. A crucial parameter-the scanning tunneling microscope tip's work function-is determined experimentally. The voltage dependent potential configuration and band bending situation are derived. Ways to validate the calculations with the experiment are discussed. Differential conductivity maps reveal that the triangular contrasts are only observed with a depletion layer present under the STM tip. The tunnel process leading to the anisotropic contrasts calls for electrons to tunnel through vacuum gap and a finite region in the semiconductor. © 2007 The American Physical Society.
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APA:
Loth, S., Wenderoth, M., Ulbrich, R.G., Malzer, S., & Döhler, G. (2007). Connection of anisotropic conductivity to tip-induced space-charge layers in scanning tunneling spectroscopy of p-doped GaAs. Physical Review B, 76(23). https://doi.org/10.1103/PhysRevB.76.235318
MLA:
Loth, Sebastian, et al. "Connection of anisotropic conductivity to tip-induced space-charge layers in scanning tunneling spectroscopy of p-doped GaAs." Physical Review B 76.23 (2007).
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