Robust graphene membranes in a silicon carbide frame
Author(s): Waldmann D, Butz B, Bauer S, Englert J, Jobst J, Ullmann K, Fromm F, Ammon M, Enzelberger-Heim M, Hirsch A, Maier S, Schmuki P, Seyller T, Spiecker E, Weber H, Spiecker E
Publisher: American Chemical Society
Publication year: 2013
Journal issue: 5
Pages range: 4441-4448
We present a fabrication process for freely suspended membranes consisting of bi- and trilayer graphene grown on silicon carbide. The procedure, involving photoelectrochemical etching, enables the simultaneous fabrication of hundreds of arbitrarily shaped membranes with an area up to 500 μm(2) and a yield of around 90%. Micro-Raman and atomic force microscopy measurements confirm that the graphene layer withstands the electrochemical etching and show that the membranes are virtually unstrained. The process delivers membranes with a cleanliness suited for high-resolution transmission electron microscopy (HRTEM) at atomic scale. The membrane, and its frame, is very robust with respect to thermal cycling above 1000 °C as well as harsh acidic or alkaline treatment.
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APA: Waldmann, D., Butz, B., Bauer, S., Englert, J., Jobst, J., Ullmann, K.,... Spiecker, E. (2013). Robust graphene membranes in a silicon carbide frame. ACS nano, 7(5), 4441-4448. https://dx.doi.org/10.1021/nn401037c
MLA: Waldmann, Daniel, et al. "Robust graphene membranes in a silicon carbide frame." ACS nano 7.5 (2013): 4441-4448.