Silicon/organic hybrid heterojunction infrared photodetector operating in the telecom regime

Bednorz M, Matt G, Glowacki ED, Fromherz T, Brabec C, Scharber MC, Sitter H, Sariciftci NS (2013)


Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2013

Journal

Publisher: Elsevier

Book Volume: 14

Pages Range: 1344-1350

Journal Issue: 5

DOI: 10.1016/j.orgel.2013.02.009

Abstract

The authors report on the fabrication of a silicon/organic heterojunction based IR photodetector. It is demonstrated that an Al/p-Si/perylene-derivative/ Al heterostructure exhibits a photovoltaic effect up to 2.7 μm (0.46 eV), a value significantly lower than the bandgap of either material. Although the devices are not optimized, at room temperature a rise time of 300 ns, a responsivity of ≈0.2 mA/W with a specific detectivity of D ≈ 7 × 10 Jones at 1.55 μm is found. The achieved responsivity is two orders of magnitude higher compared to our previous efforts [1,2]. It will be outlined that the photocurrent originates from an absorption mechanism involving excitation of an electron from the Si valence band into the extended LUMO state in the perylene-derivative, with possible participation of intermediate localized surface state in the organic material. The non-invasive deposition of the organic interlayer onto the Si results in compatibility with the CMOS process, making the presented approach a potential alternative to all inorganic device concepts.© 2013 Elsevier B.V. All rights reserved.

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APA:

Bednorz, M., Matt, G., Glowacki, E.D., Fromherz, T., Brabec, C., Scharber, M.C.,... Sariciftci, N.S. (2013). Silicon/organic hybrid heterojunction infrared photodetector operating in the telecom regime. Organic Electronics, 14(5), 1344-1350. https://doi.org/10.1016/j.orgel.2013.02.009

MLA:

Bednorz, Mateusz, et al. "Silicon/organic hybrid heterojunction infrared photodetector operating in the telecom regime." Organic Electronics 14.5 (2013): 1344-1350.

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