Micro-optical characterization study of highly p-type doped SiC : Al wafers
Wellmann P, Müller R, Pons M, Thuaire A, Crisci A, Mermoux M, Auvray L (2005)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2005
Journal
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 483
Pages Range: 393-396
Conference Proceedings Title: Materials Science Forum (Volumes 483-485)
Event location: Bologna
DOI: 10.4028/www.scientific.net/MSF.483-485.393
Abstract
We have studied the application of optical techniques for the determination of the spatial distribution of electronic properties of highly aluminum doped p-type SiC wafers. Absorption and birefringence mapping are known to be sensitive characterization methods to determine the homogeneity of charge carrier concentration and defects in n-type SiC. In the case of highly p-type doped SiC these methods fail due to the opaque character of the material. In this paper we show that Raman spectroscopy which is a reflective method can be used in order to address the same materials properties like absorption and birefringence. The study was performed using medium doped p-type SiC:Al where optical transmission and reflection methods can be applied simultaneously.
Authors with CRIS profile
Involved external institutions
France (FR)How to cite
APA:
Wellmann, P., Müller, R., Pons, M., Thuaire, A., Crisci, A., Mermoux, M., & Auvray, L. (2005). Micro-optical characterization study of highly p-type doped SiC : Al wafers. Materials Science Forum, 483, 393-396. https://dx.doi.org/10.4028/www.scientific.net/MSF.483-485.393
MLA:
Wellmann, Peter, et al. "Micro-optical characterization study of highly p-type doped SiC : Al wafers." Materials Science Forum 483 (2005): 393-396.
BibTeX: Download