Wellmann P, Queren D, Müller R, Sakwe A, Künecke U (2006)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2006
Book Volume: 527-529
Pages Range: 79-82
Conference Proceedings Title: Materials Science Forum (Volumes 527-529)
DOI: 10.4028/www.scientific.net/MSF.527-529.79
The long term performance of today's Sic based bipolar power devices suffer strongly from stacking fault formation caused by slip of basal plane dislocations, the latter often originating from the n-type doped Sic substrate wafer. In this paper, using sequentially p-type/n-type/p-type doped Sic crystals, we address the question, whether basal plane dislocation generation and annihilation behaves differently in n-type and p-type Sic. We have found that basal plane dislocations are absent or at least appear significantly less pronounced in p-type doped Sic, which may become of great importance for the stacking fault problem in sic.
APA:
Wellmann, P., Queren, D., Müller, R., Sakwe, A., & Künecke, U. (2006). Basal plane dislocation dynamics in highly p-type doped versus highly n-type doped SiC. Materials Science Forum, 527-529, 79-82. https://dx.doi.org/10.4028/www.scientific.net/MSF.527-529.79
MLA:
Wellmann, Peter, et al. "Basal plane dislocation dynamics in highly p-type doped versus highly n-type doped SiC." Materials Science Forum 527-529 (2006): 79-82.
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