Stroth C, Sayed MH, Schuster M, Ohland J, Hammer-Riedel I, Hammer MS, Wellmann P, Parisi J, Gütay L (2017)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2017
Publisher: Springer New York LLC
Pages Range: 1-9
DOI: 10.1007/s10854-017-6467-8
The constitution of secondary phases in kesterite CuZnSnSe (CZTSe) thin films is still a limiting factor for their application in solar cells. Therefore an enhanced understanding of phase formation processes during the fabrication of CZTSe films is required. In this study we present a temperature and film-depth dependent phase analysis of Zn/Sn/Cu precursors on ZnO substrates selenized at different temperatures. A special sample preparation step using a focused ion beam was applied to prepare shallow angle cross sections for depth-resolved Raman profiling of the thin films. At low selenization temperatures multiphase structures are demonstrated and a first formation of CZTSe besides secondary phases at only 250 °C is detected. At high selenization temperatures an accumulation of ZnSe at the interface of CZTSe and ZnO substrates is observed. Furthermore indications for the formation of a thin SnO interface layer were found by X-ray diffraction, secondary electron microscopy and energy dispersive X-ray spectrometry.
APA:
Stroth, C., Sayed, M.H., Schuster, M., Ohland, J., Hammer-Riedel, I., Hammer, M.S.,... Gütay, L. (2017). Depth-resolved and temperature dependent analysis of phase formation processes in Cu–Zn–Sn–Se films on ZnO substrates. Journal of Materials Science: Materials in Electronics, 1-9. https://dx.doi.org/10.1007/s10854-017-6467-8
MLA:
Stroth, Christiane, et al. "Depth-resolved and temperature dependent analysis of phase formation processes in Cu–Zn–Sn–Se films on ZnO substrates." Journal of Materials Science: Materials in Electronics (2017): 1-9.
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