Advances in wide bandgap SiC for optoelectronics

Ou H, Ou Y, Argyraki A, Schimmel S, Kaiser M, Wellmann P, Linnarsson MK, Jokubavicius V, Sun J, Liljedahl R, Syväjärvi M (2014)

Publication Language: English

Publication Status: Published

Publication Type: Journal article

Publication year: 2014

Journal

European Physical Journal B EDP Sciences: EPJ

Publisher: EDP Sciences: EPJ

Book Volume: 87

DOI: 10.1140/epjb/e2014-41100-0

Abstract

Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication. This paper will review the advances in fluorescent SiC for white light-emitting diodes, covering the polycrystalline doped SiC source material growth, single crystalline epitaxy growth of fluorescent SiC, and nanofabrication of SiC to enhance the extraction efficiency for fluorescent SiC based white LEDs.

Authors with CRIS profile

Saskia Schimmel Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Michl Kaiser Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

Linköping University SE Sweden (SE) Technical University of Denmark / Danmarks Tekniske Universitet (DTU) DK Denmark (DK) Royal Institute of Technology / Kungliga Tekniska Högskolan (KTH) SE Sweden (SE)

How to cite

APA:

Ou, H., Ou, Y., Argyraki, A., Schimmel, S., Kaiser, M., Wellmann, P.,... Syväjärvi, M. (2014). Advances in wide bandgap SiC for optoelectronics. European Physical Journal B, 87. https://dx.doi.org/10.1140/epjb/e2014-41100-0

MLA:

Ou, Haiyan, et al. "Advances in wide bandgap SiC for optoelectronics." European Physical Journal B 87 (2014).

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