Digital x-ray imaging of SiCPVT process: Analysis of crystal growth and powder source degradation
Wellmann P, Bickermann M, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A (2000)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2000
Journal
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 338-342
Pages Range: 71-74
Conference Proceedings Title: Materials Science Forum (Volumes 338-342)
Event location: Research Triangle Park, North Carolina
DOI: 10.4028/www.scientific.net/MSF.338-342.71
Abstract
Using digital x-ray imaging during silicon carbide (SiC) physical vapor transport process the SiC crystal growth as well as SiC powder source degradation have been monitored online. Using digital image processing we have (i) extracted from the x-ray shots the shape of the crystal growth interface, (ii) determined the crystal growth rate and (iii) analyzed the evolution of the SiC source material by determining its density as a function of progressing process time. The underlying sublimation and crystallization effects are discussed.
Authors with CRIS profile
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Matthias Bickermann
Technische Fakultät
Albrecht Winnacker
Technische Fakultät
How to cite
APA:
Wellmann, P., Bickermann, M., Hofmann, H.-D., Kadinski, L., Selder, M., Straubinger, T., & Winnacker, A. (2000). Digital x-ray imaging of SiCPVT process: Analysis of crystal growth and powder source degradation. Materials Science Forum, 338-342, 71-74. https://doi.org/10.4028/www.scientific.net/MSF.338-342.71
MLA:
Wellmann, Peter, et al. "Digital x-ray imaging of SiCPVT process: Analysis of crystal growth and powder source degradation." Materials Science Forum 338-342 (2000): 71-74.
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