Weingärtner R, Wellmann P, Bickermann M, Hofmann HD, Straubinger T, Winnacker A (2002)
Publication Language: English
Publication Status: Published
Publication Type: Journal article
Publication year: 2002
Publisher: American Institute of Physics (AIP)
Book Volume: 80
Pages Range: 70-72
Journal Issue: 1
DOI: 10.1063/1.1430262
We have investigated the effect of doping on absorption for various SiC polytypes, i.e., n-type (N) 6H-SiC, 4H-SiC, and 15R-SiC, p-type (Al) 6H-SiC, and 4H-SiC, and p-type (B) 6H-SiC. For these polytypes the band-gap narrowing with higher doping concentration is observed. In addition, for n-type doping below band-gap absorption bands at 464 nm for 4H-SiC, at 623 nm for 6H-SiC, and at 422 and 734 nm for 15R-SiC are observed. The peak intensities of these absorption bands show a linear relation to the charge carrier concentration obtained from Hall measurements. The corresponding calibration factors are given. As an application a purely optical wafer mapping of the spatial variation of the charge carrier concentration is demonstrated. (C) 2002 American Institute of Physics.
APA:
Weingärtner, R., Wellmann, P., Bickermann, M., Hofmann, H.-D., Straubinger, T., & Winnacker, A. (2002). Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements. Applied Physics Letters, 80(1), 70-72. https://dx.doi.org/10.1063/1.1430262
MLA:
Weingärtner, Roland, et al. "Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements." Applied Physics Letters 80.1 (2002): 70-72.
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