'In situ synthesis' of source material from elemental Si and C during SiCPVT growth process and characterization using digital X-ray imaging
Wellmann P, Herro ZG, Straubinger T, Winnacker A (2002)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2002
Journal
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 389-393
Pages Range: 91-94
Conference Proceedings Title: Materials Science Forum (Volumes 389-393)
Event location: Tsukuba
DOI: 10.4028/www.scientific.net/MSF.389-393.91
Abstract
Silicon Carbide (SiC) single crystals grown by the physical vapor transport technique usually use SiC powder as source material which was synthesized in a previous technological step. We have investigated the possibility to combine the SiC synthesis and SiC crystal growth into one process. Using a SiC wafer on top of the source material which shields the SiC seed from the exothermal Si + C insitu synthesis we were able to grow SiC crystals with structural properties comparable to the conventional process; i.e. 40mm 6H-SiC single crystal diameter and micropipe density <200cm(-2).
Authors with CRIS profile
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Albrecht Winnacker
Technische Fakultät
How to cite
APA:
Wellmann, P., Herro, Z.G., Straubinger, T., & Winnacker, A. (2002). 'In situ synthesis' of source material from elemental Si and C during SiCPVT growth process and characterization using digital X-ray imaging. Materials Science Forum, 389-393, 91-94. https://dx.doi.org/10.4028/www.scientific.net/MSF.389-393.91
MLA:
Wellmann, Peter, et al. "'In situ synthesis' of source material from elemental Si and C during SiCPVT growth process and characterization using digital X-ray imaging." Materials Science Forum 389-393 (2002): 91-94.
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