Anomalous charge carrier transport phenomena in highly aluminum doped SiC
Müller R, Künecke U, Weingärtner R, Maier M, Wellmann P (2006)
Publication Language: English
Publication Status: Published
Publication Type: Journal article
Publication year: 2006
Journal
Publisher: Wiley - V C H Verlag GmbbH & Co.
Book Volume: 3
Pages Range: 554-557
Journal Issue: 3
Abstract
Temperature dependant Hall effect measurements were performed on aluminum doped SiC samples with specific resistivities between 8 Omega cm and 0.1 Omega cm. In all samples indications for impurity conduction at low temperatures were found. In low doped samples, a sharp transition between the impurity conduction transport regime and the hole conduction regime is visible in the temperature dependence of specific resistivity, charge carrier concentration and mobility. In highly doped samples (rho < 0.2 Omega cm), this transition is no longer confined to a small temperature range and much less abrupt. We conclude that the impurity conduction is still present at high temperatures in highly aluminum doped SiC so that at least two competing transport mechanisms are present simultaneously in these samples. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.
Authors with CRIS profile
Ulrike Künecke
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Involved external institutions
Germany (DE)How to cite
APA:
Müller, R., Künecke, U., Weingärtner, R., Maier, M., & Wellmann, P. (2006). Anomalous charge carrier transport phenomena in highly aluminum doped SiC. Physica Status Solidi C: Conferences, 3(3), 554-557. https://doi.org/10.1002/pssc.200564150
MLA:
Müller, Ralf, et al. "Anomalous charge carrier transport phenomena in highly aluminum doped SiC." Physica Status Solidi C: Conferences 3.3 (2006): 554-557.
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