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Real-time measurement of the evolution of growth facets during SiC PVT bulk growth using 3-D X-ray computed tomography

Neubauer G, Salamon M, Uhlmann N, Wellmann P (2014)

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Publication Language: English

Publication Status: Published

Publication Type: Journal article

Publication year: 2014

Journal

Publisher: Trans Tech Publications

City/Town: Switzerland

Book Volume: 778-780

Pages Range: 9-12

Conference Proceedings Title: Materials Science Forum Vols. 778-780

Event location: Miyazaki

ISBN: 9783038350101

DOI: 10.4028/www.scientific.net/MSF.778-780.9

Abstract

In this paper, we present our technique for obtaining a real-time 3-D volume shape of the SiC crystal using X-ray computed tomography (CT). In particular, it is possible to determine in-situ the shape of the growth interface with high precision at growth temperatures above 2000 °C in a conventional 3 physical vapor transport (PVT) growth system. We show that the size and shape of a facet can be monitored at different stages during growth and furthermore the crystal's face boundary can be determined with high precision throughout the whole growth process. Real-time in our case means recording one image sequence within 2 to 15 minutes depending on the quantity and quality of the images. © (2014) Trans Tech Publications, Switzerland.

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How to cite

APA:

Neubauer, G., Salamon, M., Uhlmann, N., & Wellmann, P. (2014). Real-time measurement of the evolution of growth facets during SiC PVT bulk growth using 3-D X-ray computed tomography. Materials Science Forum, 778-780, 9-12. https://dx.doi.org/10.4028/www.scientific.net/MSF.778-780.9

MLA:

Neubauer, Georg, et al. "Real-time measurement of the evolution of growth facets during SiC PVT bulk growth using 3-D X-ray computed tomography." Materials Science Forum 778-780 (2014): 9-12.

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