The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

Schimmel S, Kaiser M, Jokubavicius V, Ou Y, Hens P, Linnarsson MK, Sun J, Liljedahl R, Ou H, Syväjärvi M, Wellmann P (2014)

Publication Status: Published

Publication Type: Journal article

Publication year: 2014

Journal

Publisher: Institute of Physics: Open Access Journals / IOP Publishing

Book Volume: 56

DOI: 10.1088/1757-899X/56/1/012002

Abstract

Donor-acceptor co-doped SiC is a promising light converter for novel monolithic all-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The impact of different types of defects is studied by characterizing fluorescent silicon carbide layers with regard to photoluminescence intensity, homogeneity and efficiency taking into account dislocation density and distribution. Different doping concentrations and variations in gas phase composition and pressure are investigated.

Authors with CRIS profile

Involved external institutions

Linköping University Sweden (SE) Technical University of Denmark / Danmarks Tekniske Universitet (DTU) Denmark (DK) Royal Institute of Technology / Kungliga Tekniska Högskolan (KTH) Sweden (SE)

How to cite

APA:

Schimmel, S., Kaiser, M., Jokubavicius, V., Ou, Y., Hens, P., Linnarsson, M.K.,... Wellmann, P. (2014). The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy. IOP Conference Series: Materials Science and Engineering, 56. https://dx.doi.org/10.1088/1757-899X/56/1/012002

MLA:

Schimmel, Saskia, et al. "The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy." IOP Conference Series: Materials Science and Engineering 56 (2014).

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