Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC

Grivickas V, Gulbinas K, Jokubavicius V, Sun J, Karaliūnas M, Kamiyama S, Linnarsson MK, Kaiser M, Wellmann P, Syväjärvi M (2014)

Publication Language: English

Publication Status: Published

Publication Type: Journal article

Publication year: 2014

Journal

IOP Conference Series: Materials Science and Engineering IOP Publishing: Conference Series

Publisher: Institute of Physics: Open Access Journals / IOP Publishing

Book Volume: 56

Article Number: 012004

DOI: 10.1088/1757-899X/56/1/012004

Abstract

The thick N-B co-doped epilayers were grown by the fast sublimation growth method and the depth-resolved carrier lifetimes have been investigated by means of the free-carrier absorption (FCA) decay under perpendicular probe-pump measurement geometry. In some samples, we optically reveal in-grown carbon inclusions and polycrystalline defects of substantial concentration and show that these defects slow down excess carrier lifetime and prevent donor-acceptor pair photoluminescence (DAP PL). A pronounced electron lifetime reduction when injection level approaches the doping level was observed. It is caused by diffusion driven non-radiative recombination. However, the influence of surface recombination is small and insignificant at 300 K.

Authors with CRIS profile

Michl Kaiser Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

Vilnius University / Vilniaus universitetas LT Lithuania (LT) Linköping University SE Sweden (SE) Nagoya University / 名古屋大学 JP Japan (JP) Royal Institute of Technology / Kungliga Tekniska Högskolan (KTH) SE Sweden (SE)

How to cite

APA:

Grivickas, V., Gulbinas, K., Jokubavicius, V., Sun, J., Karaliūnas, M., Kamiyama, S.,... Syväjärvi, M. (2014). Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC. IOP Conference Series: Materials Science and Engineering, 56. https://doi.org/10.1088/1757-899X/56/1/012004

MLA:

Grivickas, Vytautas, et al. "Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC." IOP Conference Series: Materials Science and Engineering 56 (2014).

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