Fully Patterned Low-Voltage Transparent Metal Oxide Transistors Deposited Solely by Chemical Spray Pyrolysis

Faber H, Butz B, Dieker C, Spiecker E, Halik M (2013)


Publication Language: English

Publication Type: Journal article, Report

Publication year: 2013

Journal

Book Volume: 23

Pages Range: 2828--2834

Volume: 23

Issue: 22

Journal Issue: 22

URI: http://onlinelibrary.wiley.com/doi/10.1002/adfm.201202334/abstract

DOI: 10.1002/adfm.201202334

Abstract

All-inorganic transparent thin-film transistors deposited solely by the solution processing method of spray pyrolysis are reported. Different precursor materials are employed to create conducting and semiconducting species of ZnO acting as electrodes and active channel material, respectively, as well as zirconium oxide as gate dielectric layer. Additionally, a simple stencil mask system provides sufficient resolution to realize the necessary geometric patterns. As a result, fully functional low-voltage n-type transistors with a mobility of 0.18 cm2 V−1 s−1 can be demonstrated via a technique that bears the potential for upscaling. A detailed microscopic evaluation of the channel region by electron diffraction, high-resolution and analytical TEM confirms the layer stacking and provides detailed information on the chemical composition and nanocrystalline nature of the individual layers.

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APA:

Faber, H., Butz, B., Dieker, C., Spiecker, E., & Halik, M. (2013). Fully Patterned Low-Voltage Transparent Metal Oxide Transistors Deposited Solely by Chemical Spray Pyrolysis. Advanced Functional Materials, 23(22), 2828--2834. https://dx.doi.org/10.1002/adfm.201202334

MLA:

Faber, Hendrik, et al. "Fully Patterned Low-Voltage Transparent Metal Oxide Transistors Deposited Solely by Chemical Spray Pyrolysis." Advanced Functional Materials 23.22 (2013): 2828--2834.

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