Grain structure of thin-film silicon by zone melting recrystallization on SiC base layer

Kunz T, Hessmann MT, Auer R, Bochmann A, Christiansen S, Brabec C (2012)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2012

Journal

Journal of Crystal Growth Elsevier

Publisher: Elsevier

Book Volume: 357

Pages Range: 20-24

Journal Issue: 1

DOI: 10.1016/j.jcrysgro.2012.07.007

Abstract

The grain structure of thin-film silicon layers obtained by chemical vapor deposition and zone melting recrystallization (ZMR) on SiC barrier layers, as developed for thin-film solar cells, have been investigated by electron backscatter diffraction (EBSD). The occurrence of subgrain boundaries was checked by defect etching. Twin boundaries form 1 to 100 μm wide stripes, which are nearly parallel to the scan direction of ZMR. We find that stripe structure and the dominant grain orientations differ significantly from previously published ZMR layers grown on SiO surface. In a comprehensive model it is shown how the twinning structure and the dominant grain orientation can be related to the growth kinetics. The electronic activity of the defects was measured by electron beam induced current (EBiC). Contrary to other defects, the twin boundaries show no enhanced recombination. Therefore the found growth regime has potential advantages with respect of electronic properties of the layers. © 2012 Elsevier B.V. All rights reserved.

Authors with CRIS profile

Christoph Brabec Institute Materials for Electronics and Energy Technology (i-MEET)

Involved external institutions

Bayerisches Zentrum für Angewandte Energieforschung e.V. (ZAE Bayern) DE Germany (DE) Leibniz-Institut für Photonische Technologien e.V. DE Germany (DE) Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light DE Germany (DE)

How to cite

APA:

Kunz, T., Hessmann, M.T., Auer, R., Bochmann, A., Christiansen, S., & Brabec, C. (2012). Grain structure of thin-film silicon by zone melting recrystallization on SiC base layer. Journal of Crystal Growth, 357(1), 20-24. https://doi.org/10.1016/j.jcrysgro.2012.07.007

MLA:

Kunz, T., et al. "Grain structure of thin-film silicon by zone melting recrystallization on SiC base layer." Journal of Crystal Growth 357.1 (2012): 20-24.

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