Impurity Conduction in Silicon Carbide

Krieger M, Semmelroth K, Weber HB, Pensl G, Rambach M, Frey L (2007)

Publication Language: English

Publication Type: Journal article

Publication year: 2007

Journal

Materials Science Forum Trans Tech Publications

Book Volume: 556-557

Pages Range: 364

Abstract

We report on admittance spectroscopy (AS) investigations taken on aluminum (Al)doped 6H-SiC crystals at low temperatures. Admittance spectra taken on Schottky contacts of highly doped samples (N_A≥ 7.2×10 ¹⁷ cm^-3) reveal two series of conductance peaks, which cause two different slopes of the Arrhenius plot. The steep slope is attributed to the Al acceptor, while the flatter one - obtained from the low temperature peaks - is attributed to the activation energy ε₃ of nearest neighbor hopping. We propose a model, which explains the unexpected sharpness of the low temperature conductance peaks and the disappearance of these peaks for low acceptor concentrations. The model is verified by simulation, and the AS results are compared with corresponding results obtained from resistivity measurements taken on 4H- and the identical 6HSiC samples.

Authors with CRIS profile

Michael Krieger Chair of Applied Physics Heiko Weber Chair of Applied Physics Gerhard Pensl Chair of Applied Physics Lothar Frey Lehrstuhl für Elektronische Bauelemente

How to cite

APA:

Krieger, M., Semmelroth, K., Weber, H.B., Pensl, G., Rambach, M., & Frey, L. (2007). Impurity Conduction in Silicon Carbide. Materials Science Forum, 556-557, 364.

MLA:

Krieger, Michael, et al. "Impurity Conduction in Silicon Carbide." Materials Science Forum 556-557 (2007): 364.

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