Journal article
(Original article)


Conceptional design of nano-particulate ITO inks for inkjet printing of electron devices


Publication Details
Author(s): Kölpin N, Wegener CM, Teuber E, Polster S, Frey L, Roosen A
Publication year: 2013
Volume: 48
Journal issue: 4
Pages range: 1623-1631
ISSN: 0022-2461

Abstract

This manuscript presents the conceptional design of indium tin oxide inkjet inks for the manufacture of electron devices. For this purpose, the process window of the printer used is identified and the inks are conceived to meet the requirements. The nano-particles are effectively stabilized in different dispersion media. The rheological, the wetting and the drying behavior of the inks are adapted to the inkjet process and the substrates to be coated. To assemble a field effect transistor (FET), the most suitable ink is chosen and source and drain contacts are printed. In the device, a nano-particulate ZnO layer acts as semiconducting layer and the gate electrode as well as the dielectric layer is formed by a thermally oxidized silicon wafer. The electron device assembled shows the typical FET characteristic proving its functionality. © 2012 Springer Science+Business Media New York.



How to cite
APA: Kölpin, N., Wegener, C.M., Teuber, E., Polster, S., Frey, L., & Roosen, A. (2013). Conceptional design of nano-particulate ITO inks for inkjet printing of electron devices. Journal of Materials Science, 48(4), 1623-1631. https://dx.doi.org/10.1007/s10853-012-6919-8

MLA: Kölpin, Nadja, et al. "Conceptional design of nano-particulate ITO inks for inkjet printing of electron devices." Journal of Materials Science 48.4 (2013): 1623-1631.

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