The formation of CuInSe2 thin-film solar cell absorbers by laser annealing of electrodeposited precursors

Jost SG, Schurr R, Hergert F, Hock R, Schulze J, Kirbs A, Voss T, Purwins M, Palm J, Mys I (2008)


Publication Status: Published

Publication Type: Journal article

Publication year: 2008

Journal

Publisher: ELSEVIER SCIENCE BV

Book Volume: 92

Pages Range: 410-417

Journal Issue: 4

DOI: 10.1016/j.solmat.2007.10.002

Abstract

The formation of the compound semiconductor CuInSe2 by laser annealing of electroplated precursor films in inert gas atmosphere represents an entire non-vacuum production process of thin-film solar cell absorbers. Besides this technological aspect, the impact of extreme annealing rates on structural properties of the resulting semiconductor is interesting from a fundamental research point of view. For this reason, we compared absorbers processed by laser annealing with absorbers annealed with moderate heating rates in the range of 1 K/s by means of X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive X-ray analysis (EDX). All absorbers processed with laser or furnace annealing consist of crystalline CuInSe2 in the chalcopyrite crystal structure with a high degree of cation disorder. We show that laser annealing does not lead to unintentional selenium loss during the semiconductor formation process. (c) 2007 Elsevier B.V. All rights reserved.

Authors with CRIS profile

Involved external institutions

How to cite

APA:

Jost, S.G., Schurr, R., Hergert, F., Hock, R., Schulze, J., Kirbs, A.,... Mys, I. (2008). The formation of CuInSe2 thin-film solar cell absorbers by laser annealing of electrodeposited precursors. Solar Energy Materials and Solar Cells, 92(4), 410-417. https://dx.doi.org/10.1016/j.solmat.2007.10.002

MLA:

Jost, Stefan Georg, et al. "The formation of CuInSe2 thin-film solar cell absorbers by laser annealing of electrodeposited precursors." Solar Energy Materials and Solar Cells 92.4 (2008): 410-417.

BibTeX: Download