Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications

Pecqueur S, Maltenberger A, Petrukhina M, Halik M, Jäger A, Pentlehner D, Schmid G (2016)

Publication Language: English

Publication Type: Journal article, Report

Publication year: 2016

Journal

Angewandte Chemie International Edition Wiley

Book Volume: 55

Pages Range: 10493-10497

Journal Issue: 35

DOI: 10.1002/anie.201601926

Authors with CRIS profile

Sebastien Pecqueur Professur für Werkstoffwissenschaften (Polymerwerkstoffe) Marcus Halik Professur für Werkstoffwissenschaften (Polymerwerkstoffe)

Involved external institutions

Siemens AG, Sector Corporate Technology DE Germany (DE)

How to cite

APA:

Pecqueur, S., Maltenberger, A., Petrukhina, M., Halik, M., Jäger, A., Pentlehner, D., & Schmid, G. (2016). Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications. Angewandte Chemie International Edition, 55(35), 10493-10497. https://dx.doi.org/10.1002/anie.201601926

MLA:

Pecqueur, Sebastien, et al. "Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications." Angewandte Chemie International Edition 55.35 (2016): 10493-10497.

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