Interface structure and strain state of InAs nano-clusters embedded in silicon

Wu M, Trampert A, Al-Zoubi T, Benyoucef M, Reithmaier JP (2015)

Publication Status: Published

Publication Type: Journal article

Publication year: 2015

Journal

Acta Materialia Elsevier

Publisher: PERGAMON-ELSEVIER SCIENCE LTD

Book Volume: 90

Pages Range: 133-139

DOI: 10.1016/j.actamat.2015.02.042

Abstract

We present a quantitative transmission electron microscopy (TEM) study about the interface structure and strain state of buried InAs nano-clusters in Si(001) grown by molecular beam epitaxy. The nano-clusters show a typical polyhedral shape of 4-12 nm in diameter with {111} and {001} interface planes. Moire fringe analysis based on dark-field images and high-resolution (HR) TEM reveals that the nano-clusters are almost fully relaxed via the creation of misfit dislocation loops that are restricted only in the InAs/Si interface region, whereas the Si matrix is defect-free. Nevertheless, depending on the individual shape of the nano-clusters, a small amount of anisotropic residual strain in the nano-clusters is identified via strain mapping by geometric phase analysis. The scenario of mismatch stress relaxation by the formation of dislocation loops is discussed with a theoretical model based on continuum elasticity which qualitatively explains the experimental results. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Authors with CRIS profile

Mingjian Wu Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)

Additional Organisation(s)

Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)

Involved external institutions

Universität Kassel DE Germany (DE) Paul-Drude-Institut für Festkörperelektronik - Leibniz-Institut im Forschungsverbund Berlin e.V. DE Germany (DE)

How to cite

APA:

Wu, M., Trampert, A., Al-Zoubi, T., Benyoucef, M., & Reithmaier, J.P. (2015). Interface structure and strain state of InAs nano-clusters embedded in silicon. Acta Materialia, 90, 133-139. https://doi.org/10.1016/j.actamat.2015.02.042

MLA:

Wu, Mingjian, et al. "Interface structure and strain state of InAs nano-clusters embedded in silicon." Acta Materialia 90 (2015): 133-139.

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