Journal article
(Original article)


Tunable doping in PbS nanocrystal field-effect transistors using surface molecular dipoles


Publication Details
Author(s): Nugraha MI, Matsui H, Bisri SZ, Sytnyk M, Heiß W, Loi MA, Takeya J, Heiß W
Journal: APL Materials
Publisher: American Institute of Physics Inc.
Publication year: 2016
Volume: 4
Journal issue: 11
ISSN: 2166-532X
Language: English

Abstract

We study the effect of self-assembled monolayer (SAM) treatment of the SiO dielectric on the electrical characteristics of PbS transistors. Using SAMs, we observe threshold voltage shifts in the electron transport, allowing us to tune the electrical properties of the devices depending on the SAM molecule used. Moreover, the use of a specific SAM improves the charge carrier mobility in the devices by a factor of three, which is attributed to the reduced interface traps due to passivated silanol on the SiO surface. These reduced traps confirm that the voltage shifts are not caused by the trap states induced by the SAMs.



How to cite
APA: Nugraha, M.I., Matsui, H., Bisri, S.Z., Sytnyk, M., Heiß, W., Loi, M.A.,... Heiß, W. (2016). Tunable doping in PbS nanocrystal field-effect transistors using surface molecular dipoles. APL Materials, 4(11). https://dx.doi.org/10.1063/1.4966208

MLA: Nugraha, Mohamad I., et al. "Tunable doping in PbS nanocrystal field-effect transistors using surface molecular dipoles." APL Materials 4.11 (2016).

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