Switching behaviour of individual Ag-TCNQ nanowires: an in situ transmission electron microscopy study

Ran K, Rösner B, Butz B, Fink R, Spiecker E (2016)


Publication Status: Published

Publication Type: Journal article

Publication year: 2016

Journal

Publisher: Institute of Physics: Hybrid Open Access

Book Volume: 27

Journal Issue: 42

DOI: 10.1088/0957-4484/27/42/425703

Abstract

The organic semiconductor silver-tetracyanoquinodimethane (Ag-TCNQ) exhibits electrical switching and memory characteristics. Employing a scanning tunnelling microscopy setup inside a transmission electron microscope, the switching behaviour of individual Ag-TCNQ nanowires (NWs) is investigated in detail. For a large number of NWs, the switching between a high (OFF) and a low (ON) resistance state was successfully stimulated by negative bias sweeps. Fitting the experimental I-V curves with a Schottky emission function makes the switching features prominent and thus enables a direct evaluation of the switching process. A memory cycle including writing, reading and erasing features is demonstrated at an individual NW. Moreover, electronic failure mechanisms due to Joule heating are discussed. These findings have a significant impact on our understanding of the switching behaviour of Ag-TCNQ.

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APA:

Ran, K., Rösner, B., Butz, B., Fink, R., & Spiecker, E. (2016). Switching behaviour of individual Ag-TCNQ nanowires: an in situ transmission electron microscopy study. Nanotechnology, 27(42). https://doi.org/10.1088/0957-4484/27/42/425703

MLA:

Ran, Ke, et al. "Switching behaviour of individual Ag-TCNQ nanowires: an in situ transmission electron microscopy study." Nanotechnology 27.42 (2016).

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