Study of boron incorporation during PVT growth of p-type SiC crystals
Bickermann M, Hofmann HD, Rasp M, Straubinger T, Weingärtner R, Wellmann P, Winnacker A (2001)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2001
Journal
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 353-356
Pages Range: 49-52
Conference Proceedings Title: Materials Science Forum (Volumes 353-356)
Event location: Kloster Banz
DOI: 10.4028/www.scientific.net/MSF.353-356.49
Abstract
The incorporation of the acceptor boron during vapor growth (PVT) of 6H-SiC bulk crystals has been studied. The chemical segregation coefficient of boron (ratio between B content of the grown crystal and of the source) has been determined to be 0.4 +/-0.1 for a wide range of B concentrations in tie starting material (0.1-300 ppm wt). For reference purposes the impurity concentrations in nominally undoped SiC crystals have been analyzed. Whereas both source and SiC crystals exhibit a high purity in regard to p-type (Al, B) and deep level (V, Ti) impurities, a considerable amount of residual nitrogen was detected resulting in carrier concentrations n = 1X10(16) to 1.5X10(17) cm(-3). Carrier concentrations in the p-type B doped crystals were found to range from 2X10(14) to 2X10(16) cm(-3) for starting B concentrations between 3 to 300 ppm wt. Axial nonuniformities, i.e. carrier concentration in SiC:B increases with crystal length, depend on the compensation ratio. At higher B content the homogeneity improves. Compared with segregation in Al doped SiC, results indicate that SiC:B powder acts as infinite, SiC:Al powder as finite dopant source. The lateral distribution of carrier concentration in SiC:B crystals (wafer mapping) has been measured showing a good homogeneity of electrical properties.
Authors with CRIS profile
Matthias Bickermann
Technische Fakultät
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Albrecht Winnacker
Technische Fakultät
How to cite
APA:
Bickermann, M., Hofmann, H.-D., Rasp, M., Straubinger, T., Weingärtner, R., Wellmann, P., & Winnacker, A. (2001). Study of boron incorporation during PVT growth of p-type SiC crystals. Materials Science Forum, 353-356, 49-52. https://doi.org/10.4028/www.scientific.net/MSF.353-356.49
MLA:
Bickermann, Matthias, et al. "Study of boron incorporation during PVT growth of p-type SiC crystals." Materials Science Forum 353-356 (2001): 49-52.
BibTeX: Download