Stability criteria for 4H-SiC bulk growth
Straubinger T, Bickermann M, Hofmann HD, Weingärtner R, Wellmann P, Winnacker A (2001)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2001
Journal
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 353-356
Pages Range: 25-28
Conference Proceedings Title: Materials Science Forum (Volumes 353-356)
Event location: Kloster Banz
DOI: 10.4028/www.scientific.net/MSF.353-356.25
Abstract
Types i and ii of polytype instabilities (6H/15R) were observed to be not stable and overgrown by 4H. Furthermore type i could be avoided by a seeding procedure with low supersaturation. No dependence on pressure or axial temperature gradient was noticed for the type ii polytype generation mechanism. Concerning the complete conversion to 6H, 4H stability showed no correlation with the argon pressure but we found a critical temperature for conversion, which depends on the axial temperature gradient. Far low axial T-gradients the critical temperature decreased.
Authors with CRIS profile
Matthias Bickermann
Technische Fakultät
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Albrecht Winnacker
Technische Fakultät
How to cite
APA:
Straubinger, T., Bickermann, M., Hofmann, H.-D., Weingärtner, R., Wellmann, P., & Winnacker, A. (2001). Stability criteria for 4H-SiC bulk growth. Materials Science Forum, 353-356, 25-28. https://dx.doi.org/10.4028/www.scientific.net/MSF.353-356.25
MLA:
Straubinger, Thomas, et al. "Stability criteria for 4H-SiC bulk growth." Materials Science Forum 353-356 (2001): 25-28.
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