Investigation of a PVT SiC-growth set-up modified by an additional gas flow
Straubinger T, Wellmann P, Winnacker A (2001)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2001
Journal
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 353-356
Pages Range: 33-36
Conference Proceedings Title: Materials Science Forum (Volumes 353-356)
Event location: Kloster Banz
DOI: 10.4028/www.scientific.net/MSF.353-356.33
Abstract
We have investigated a new type of a so called "modified PVT setup" with an additional gas flow into the growth cell. The motivation was an improvement of the parameter control for doping of SiC using gas sources, i.e. homogenization of doping levels. Since an additional gas flow inside the growth cell could cause severe distortions of the vapor flow we have performed basic investigations of the influence of an inner argon gas stream on thermal field and structural properties of the growing crystal. We have studied the impact of the extern gas flow towards the surface of the growing crystal. Strong evidence for micropipe closing in the initial growth stage and reduction of second phase inclusions was found.
Authors with CRIS profile
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Albrecht Winnacker
Technische Fakultät
How to cite
APA:
Straubinger, T., Wellmann, P., & Winnacker, A. (2001). Investigation of a PVT SiC-growth set-up modified by an additional gas flow. Materials Science Forum, 353-356, 33-36. https://dx.doi.org/10.4028/www.scientific.net/MSF.353-356.33
MLA:
Straubinger, Thomas, Peter Wellmann, and Albrecht Winnacker. "Investigation of a PVT SiC-growth set-up modified by an additional gas flow." Materials Science Forum 353-356 (2001): 33-36.
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