Impact of SiC source material on temperature field and vapor transport during SiCPVT crystal growth process
Wellmann P, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A (2001)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2001
Journal
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 353-356
Pages Range: 11-14
Conference Proceedings Title: Materials Science Forum (Volumes 353-356)
Event location: Kloster Banz
DOI: 10.4028/www.scientific.net/MSF.353-356.11
Abstract
We have investigated the impact of morphological changes of the source material during physical vapor transport growth of silicon carbide on the crystal growth process, i.e. global temperature field and vapor transport between source material and crystal? has been studied. Digital x-ray imaging was performed for monitoring of the ongoing processes inside the SiC source material. Numerical modeling was carried out to study the effect on the crystal growth process. Three different SiC sources with varying grain size were investigated. While the SiC source material undergoes fundamental transitions during growth (i.e, evolution from powder to compressed SiC block! it is found that the global growth process is more stable than one would expect. A kev role is played bp a condensed disk like structure on top of the source material which is present for all SiC sources.
Authors with CRIS profile
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Albrecht Winnacker
Technische Fakultät
How to cite
APA:
Wellmann, P., Hofmann, H.-D., Kadinski, L., Selder, M., Straubinger, T., & Winnacker, A. (2001). Impact of SiC source material on temperature field and vapor transport during SiCPVT crystal growth process. Materials Science Forum, 353-356, 11-14. https://dx.doi.org/10.4028/www.scientific.net/MSF.353-356.11
MLA:
Wellmann, Peter, et al. "Impact of SiC source material on temperature field and vapor transport during SiCPVT crystal growth process." Materials Science Forum 353-356 (2001): 11-14.
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