Wellmann P, Bushevoy S, Weingärtner R (2001)
Publication Language: English
Publication Status: Published
Publication Type: Journal article
Publication year: 2001
Publisher: Elsevier
Book Volume: 80
Pages Range: 352-356
Journal Issue: 1-3
DOI: 10.1016/S0921-5107(00)00598-5
A non-destructive, absorption measurement based optical method has been developed in order to determine doping type (n- or p-type), doping level and doping level distribution in 4H and 6H silicon carbide (SiC) wafers. The bandgap absorption has been calculated numerically taking into account band filling, band shrinkage and band tailing effects which al e a function of donor and acceptor concentration N-D and N-A, respectively. The numerical results Lire compared with experimental data. A calibration plot of the doping dependence of the absorption of n-type 6H SiC is presented and the application for mapping of the SiC wafer duping level distribution is demonstrated. (C) 2001 Elsevier Science B.V. All rights reserved.
APA:
Wellmann, P., Bushevoy, S., & Weingärtner, R. (2001). Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurements. Materials Science and Engineering B-Advanced Functional Solid-State Materials, 80(1-3), 352-356. https://dx.doi.org/10.1016/S0921-5107(00)00598-5
MLA:
Wellmann, Peter, S. Bushevoy, and Roland Weingärtner. "Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurements." Materials Science and Engineering B-Advanced Functional Solid-State Materials 80.1-3 (2001): 352-356.
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