On the origin of the below band-gap absorption bands in n-type (N) 4H-and 6H-SiC
Weingärtner R, Wellmann P, Winnacker A (2004)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2004
Journal
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 457-460
Pages Range: 645-648
Conference Proceedings Title: Materials Science Forum (Volumes 457-460)
Event location: Lyon
DOI: 10.4028/www.scientific.net/MSF.457-460.645
Abstract
The dopant concentration dependence of the below band-gap absorption bands at room temperature in n-type (N) 4H- and 6H-SiC are investigated. The occupation of the nitrogen donors are determined from temperature dependent Hall effect measurements. In combination with the strength of the absorption bands the cross sections of these transitions are obtained. It is shown that the below band-gap absorption bands may be attributed to the inequivalent lattice sites of the nitrogen donor, i.e. the transition is defect-like with different initial states of the nitrogen donors and a common final state in the conduction band.
Authors with CRIS profile
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Albrecht Winnacker
Technische Fakultät
How to cite
APA:
Weingärtner, R., Wellmann, P., & Winnacker, A. (2004). On the origin of the below band-gap absorption bands in n-type (N) 4H-and 6H-SiC. Materials Science Forum, 457-460, 645-648. https://dx.doi.org/10.4028/www.scientific.net/MSF.457-460.645
MLA:
Weingärtner, Roland, Peter Wellmann, and Albrecht Winnacker. "On the origin of the below band-gap absorption bands in n-type (N) 4H-and 6H-SiC." Materials Science Forum 457-460 (2004): 645-648.
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