Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions
Wellmann P, Straubinger T, Desperrier P, Müller R, Künecke U, Sakwe A, Schmitt H, Winnacker A, Blanquet E, Dedulle J, Pons M (2005)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2005
Journal
Book Volume: 483
Pages Range: 25-30
Conference Proceedings Title: Materials Science Forum (Volumes 483-485)
DOI: 10.4028/www.scientific.net/MSF.483-485.25
Abstract
We review the development of a modified physical vapor transport (M-PVT) growth technique for the preparation of SiC single crystals which makes use of an additional gas pipe into the growth cell. While the gas phase composition is basically fixed in conventional physical vapor transport (PVT) growth by crucible design and temperature field, the gas inlet of the M-PVT configuration allows the direct tuning of the gas phase composition for improved growth conditions. The phrase "additional" means that only small amounts of extra gases are supplied in order to fine-tune the gas phase composition. We discuss the experimental implementation of the extra gas pipe and present numerical simulations of temperature field and mass transport in the new growth configuration. The potential of the growth technique will be outlined by showing the improvements achieved for p-type doping of 4H-SiC with aluminum, i.e. [Al]=9-10(19)cm(-3) and p< 0.2&UOmega; cm, and n-type doping of SiC with phosphorous, i.e. [P]=7.8(.)10(17)cm(-3).
Authors with CRIS profile
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Ulrike Künecke
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Albrecht Winnacker
Technische Fakultät
Involved external institutions
France (FR)How to cite
APA:
Wellmann, P., Straubinger, T., Desperrier, P., Müller, R., Künecke, U., Sakwe, A.,... Pons, M. (2005). Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions. Materials Science Forum, 483, 25-30. https://dx.doi.org/10.4028/www.scientific.net/MSF.483-485.25
MLA:
Wellmann, Peter, et al. "Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions." Materials Science Forum 483 (2005): 25-30.
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