P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates

Hens P, Syvaejaervi M, Oehlschläger F, Wellmann P, Yakimova R (2009)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2009

Journal

Materials Science Forum Trans Tech Publications

Book Volume: 615-617

Pages Range: 85-88

Conference Proceedings Title: Materials Science Forum (Volumes 615-617)

DOI: 10.4028/www.scientific.net/MSF.615-617.85

Abstract

The co-doping of nitrogen and aluminum has been Studied in the sublimation epitaxy growth process. It is shown that the doping may be tuned from n-type to p-type by, effect of substrate, doping, growth face and volume of the growth crucible. The co-doped layers show a nearly ideal I-V characteristic and luminescence at room temperature.

Authors with CRIS profile

Philip Hens Graduiertenzentrum der FAU Felix Oehlschläger Institute Materials for Electronics and Energy Technology (i-MEET) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

Linköping University SE Sweden (SE)

How to cite

APA:

Hens, P., Syvaejaervi, M., Oehlschläger, F., Wellmann, P., & Yakimova, R. (2009). P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates. Materials Science Forum, 615-617, 85-88. https://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.85

MLA:

Hens, Philip, et al. "P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates." Materials Science Forum 615-617 (2009): 85-88.

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