Aluminum p-type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum

Hens P, Künecke U, Wellmann P (2009)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2009

Journal

Materials Science Forum Trans Tech Publications

Book Volume: 600-603

Pages Range: 19-22

Conference Proceedings Title: Materials Science Forum (Volumes 600-603)

DOI: 10.4028/www.scientific.net/MSF.600-603.19

Abstract

We present p-type doping of bulk SiC crystals by the modified physical vapor transport (M-PVT) technique using TMA (Tri-Methyl-Aluminum). Using TMA as a dopant precursor allows a quite well defined crystal growth process control. The issue of improvement of conductivity (reduction of substrate resistivity) by reduction of unintentional acceptor compensation by nitrogen is addressed. It is shown that a decrease of compensation from approx. 3%...10% to approx. 0.5%...2.5% leads to a charge carrier mobility and, hence, conductivity increase of about factor two.

Authors with CRIS profile

Philip Hens Graduiertenzentrum der FAU Ulrike Künecke Institute Materials for Electronics and Energy Technology (i-MEET) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

How to cite

APA:

Hens, P., Künecke, U., & Wellmann, P. (2009). Aluminum p-type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum. Materials Science Forum, 600-603, 19-22. https://dx.doi.org/10.4028/www.scientific.net/MSF.600-603.19

MLA:

Hens, Philip, Ulrike Künecke, and Peter Wellmann. "Aluminum p-type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum." Materials Science Forum 600-603 (2009): 19-22.

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