In-situ phase formation study of copper indium diselenide absorber layers from CuIn nanoparticles and evaporated selenium

Möckel S, Hölzing A, Hock R, Wellmann P (2013)


Publication Language: English

Publication Status: Published

Publication Type: Journal article

Publication year: 2013

Journal

Publisher: Elsevier

Book Volume: 535

Pages Range: 133-137

Journal Issue: 1

DOI: 10.1016/j.tsf.2012.11.081

Abstract

In this work CuInSe (CISe) thin films were fabricated by rapid thermal processing of printed CuIn nanoparticles and thermally evaporated selenium as precursor layer. Research is focused on real-time investigations such as in-situ X-ray diffraction and dynamic scanning calorimetry. These measurements show CISe formation starting at 300 C. Significant amount of intermediate phases as reported for state-of-the-art rapid thermal processing of stacked elemental layer was not observed. The morphology of the nanoparticulate layers was examined by field emission scanning electron microscopy. Grain size developed from nanosized binary CuIn nanoparticles to microsized CISe grains. Porosity decreases in the temperature range from 340 C to 540 C. © 2012 Elsevier B.V.

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How to cite

APA:

Möckel, S., Hölzing, A., Hock, R., & Wellmann, P. (2013). In-situ phase formation study of copper indium diselenide absorber layers from CuIn nanoparticles and evaporated selenium. Thin Solid Films, 535(1), 133-137. https://doi.org/10.1016/j.tsf.2012.11.081

MLA:

Möckel, Stefan, et al. "In-situ phase formation study of copper indium diselenide absorber layers from CuIn nanoparticles and evaporated selenium." Thin Solid Films 535.1 (2013): 133-137.

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