Application of 3-D X-ray computed tomography for the in-situ visualization of the SiC crystal growth interface during PVT bulk growth
Neubauer G, Salamon M, Roider F, Uhlmann N, Wellmann P (2013)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2013
Journal
Book Volume: 740-742
Pages Range: 27-30
Conference Proceedings Title: Materials Science Forum (Volumes 740-742)
DOI: 10.4028/www.scientific.net/MSF.740-742.27
Abstract
In this paper, we present for the first time an in-situ 3-D reconstruction of the SiC crystal growth interface using X-ray computed tomography (CT). We show that the shape of the growth interface can be determined with high precision at growth temperatures above 2100 °C in a conventional 3 PVT (physical vapor transport) growth system. © (2013) Trans Tech Publications, Switzerland.
Authors with CRIS profile
Georg Neubauer
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Florian Roider
Institute Materials for Electronics and Energy Technology (i-MEET)
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Involved external institutions
Germany (DE)How to cite
APA:
Neubauer, G., Salamon, M., Roider, F., Uhlmann, N., & Wellmann, P. (2013). Application of 3-D X-ray computed tomography for the in-situ visualization of the SiC crystal growth interface during PVT bulk growth. Materials Science Forum, 740-742, 27-30. https://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.27
MLA:
Neubauer, Georg, et al. "Application of 3-D X-ray computed tomography for the in-situ visualization of the SiC crystal growth interface during PVT bulk growth." Materials Science Forum 740-742 (2013): 27-30.
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