Kaiser M, Hupfer T, Jokubavicius V, Schimmel S, Syväjärvi M, Ou Y, Ou H, Linnarsson MK, Wellmann P (2013)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2013
Book Volume: 740-742
Pages Range: 39-42
Conference Proceedings Title: Materials Science Forum (Volumes 740-742)
DOI: 10.4028/www.scientific.net/MSF.740-742.39
Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.
APA:
Kaiser, M., Hupfer, T., Jokubavicius, V., Schimmel, S., Syväjärvi, M., Ou, Y.,... Wellmann, P. (2013). Polycrystalline SiC as source material for the growth of fluorescent SiC layers. Materials Science Forum, 740-742, 39-42. https://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.39
MLA:
Kaiser, Michl, et al. "Polycrystalline SiC as source material for the growth of fluorescent SiC layers." Materials Science Forum 740-742 (2013): 39-42.
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