Polycrystalline SiC as source material for the growth of fluorescent SiC layers

Kaiser M, Hupfer T, Jokubavicius V, Schimmel S, Syväjärvi M, Ou Y, Ou H, Linnarsson MK, Wellmann P (2013)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2013

Journal

Book Volume: 740-742

Pages Range: 39-42

Conference Proceedings Title: Materials Science Forum (Volumes 740-742)

DOI: 10.4028/www.scientific.net/MSF.740-742.39

Abstract

Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.

Authors with CRIS profile

Involved external institutions

Royal Institute of Technology / Kungliga Tekniska Högskolan (KTH) Sweden (SE) Linköping University Sweden (SE) Technical University of Denmark / Danmarks Tekniske Universitet (DTU) Denmark (DK)

How to cite

APA:

Kaiser, M., Hupfer, T., Jokubavicius, V., Schimmel, S., Syväjärvi, M., Ou, Y.,... Wellmann, P. (2013). Polycrystalline SiC as source material for the growth of fluorescent SiC layers. Materials Science Forum, 740-742, 39-42. https://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.39

MLA:

Kaiser, Michl, et al. "Polycrystalline SiC as source material for the growth of fluorescent SiC layers." Materials Science Forum 740-742 (2013): 39-42.

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