Metastable defects in proton implanted and annealed silicon
Jelinek M, Laven JG, Ganagona N, Job R, Schustereder W, Schulze HJ, Rommel M, Frey L (2016)
Publication Type: Journal article
Publication year: 2016
Journal
Publisher: Trans Tech Publications Ltd
Book Volume: 242
Pages Range: 169-174
ISBN: 9783038356080
DOI: 10.4028/www.scientific.net/SSP.242.169
Abstract
Two metastable defects with energy levels at Ec-0.28eV and Ec-0.37eV, which previously have been reported in proton implanted- and in proton implanted and annealed crystalline silicon are discussed. Recent results on the peculiar behavior of these defects upon periodical application of two different bias conditions during DLTS measurement are reviewed. Two specifically designed DLTS measurement sequences are proposed in order to further reveal the defects transformation rates and respective activation energies.
Authors with CRIS profile
Involved external institutions
Infineon Technologies AG
Germany (DE)
Infineon Technologies Austria AG
Austria (AT)
Fachhochschule Münster
Germany (DE)
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Germany (DE)
Germany (DE)
Infineon Technologies Austria AG
Austria (AT)
Fachhochschule Münster
Germany (DE)
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Germany (DE)
How to cite
APA:
Jelinek, M., Laven, J.G., Ganagona, N., Job, R., Schustereder, W., Schulze, H.J.,... Frey, L. (2016). Metastable defects in proton implanted and annealed silicon. Solid State Phenomena, 242, 169-174. https://dx.doi.org/10.4028/www.scientific.net/SSP.242.169
MLA:
Jelinek, M., et al. "Metastable defects in proton implanted and annealed silicon." Solid State Phenomena 242 (2016): 169-174.
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