Origin of logarithmic resistance correction in graphene

Jobst J, Weber HB (2012)


Publication Status: Published

Publication Type: Journal article, Letter

Publication year: 2012

Journal

Publisher: Nature Publishing Group

Book Volume: 8

Pages Range: 352-352

Journal Issue: 5

DOI: 10.1038/nphys2297

Abstract

Chen et al.1 recently presented data of a logarithmic low-temperature anomaly in the resistance of graphene flakes and attributed this to Kondo physics. The samples were irradiated beforehand with ions, and the appearance of a logarithmic anomaly was linked to the presence of induced defect states with unpaired electrons. Here, we present evidence that this assignment to Kondo physics is wrong. The observed effect is due to electron--electron interaction (EEI)2, which in the diffusive regime also gives a logarithmic correction to the resistance (in two dimensions). It is an effect that is based on very general assumptions, and that has been observed in many two-dimensional materials in excellent agreement with theory. It has been pinpointed in graphene recently3.

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APA:

Jobst, J., & Weber, H.B. (2012). Origin of logarithmic resistance correction in graphene. Nature Physics, 8(5), 352-352. https://dx.doi.org/10.1038/nphys2297

MLA:

Jobst, Johannes, and Heiko B. Weber. "Origin of logarithmic resistance correction in graphene." Nature Physics 8.5 (2012): 352-352.

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