Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates
Jokubavicius V, Yazdi GR, Liljedahl R, Ivanov IG, Sun J, Liu X, Schuh P, Wilhelm M, Wellmann P, Yakimova R, Syväjärvi M (2015)
Publication Language: English
Publication Status: Published
Publication Type: Journal article
Publication year: 2015
Journal
Publisher: American Chemical Society
Book Volume: 15
Pages Range: 2940-2947
Abstract
We investigated the formation of structural defects in thick (similar to 1 mm) cubic silicon carbide (3C-SiC) layers grown on off-oriented 4H-SiC substrates via a lateral enlargement mechanism using different growth conditions. A two-step growth process based on this technique was developed, which provides a trade-off between the growth rate and the number of defects in the 3C-SiC layers. Moreover, we demonstrated that the two-step growth process combined with a geometrically controlled lateral enlargement mechanism allows the formation of a single 3C-SiC domain which enlarges and completely covers the substrate surface. High crystalline quality of the grown 3C-SiC layers is confirmed using high resolution X-ray diffraction and low temperature photoluminescence measurements.
Authors with CRIS profile
Philipp Schuh
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Martin Wilhelm
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Involved external institutions
Sweden (SE)How to cite
APA:
Jokubavicius, V., Yazdi, G.R., Liljedahl, R., Ivanov, I.G., Sun, J., Liu, X.,... Syväjärvi, M. (2015). Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates. Crystal Growth & Design, 15, 2940-2947. https://dx.doi.org/10.1021/acs.cgd.5b00368
MLA:
Jokubavicius, Valdas, et al. "Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates." Crystal Growth & Design 15 (2015): 2940-2947.
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