Monolithic circuits with epitaxial graphene/silicon carbide transistors

Hertel S, Krieger M, Weber HB (2014)


Publication Type: Journal article

Publication year: 2014

Journal

Publisher: Akademie Verlag

Book Volume: 8

Pages Range: 688-691

Journal Issue: 8

DOI: 10.1002/pssr.201409171

Abstract

A concept is presented that uses epitaxial graphene on silicon carbide (SiC) for digital circuits. It uses graphene as a metal and the underlying substrate SiC as semiconductor. On the base of transistors with excellent switching behavior, Inverter and NAND operation is demonstrated. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) A concept is presented that uses epitaxial graphene on silicon carbide (SiC) for digital circuits. It uses graphene as a metal and the underlying substrate SiC as semiconductor. On the base of transistors with excellent switching behavior, Inverter and NAND operation is demonstrated. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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APA:

Hertel, S., Krieger, M., & Weber, H.B. (2014). Monolithic circuits with epitaxial graphene/silicon carbide transistors. Physica Status Solidi, 8(8), 688-691. https://doi.org/10.1002/pssr.201409171

MLA:

Hertel, Stefan, Michael Krieger, and Heiko B. Weber. "Monolithic circuits with epitaxial graphene/silicon carbide transistors." Physica Status Solidi 8.8 (2014): 688-691.

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