Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors

Krieger M, Beljakowa S, Trapaidze L, Frank T, Weber HB, Pensl G, Hatta N, Abe M, Nagasawa H, Schöner A (2008)

Publication Type: Journal article

Publication year: 2008

Journal

physica status solidi (b) Wiley

Publisher: Wiley-VCH Verlag

Book Volume: 245

Pages Range: 1390-1395

Journal Issue: 7

DOI: 10.1002/pssb.200844062

Abstract

3C-SiC/SiO2 capacitors are fabricated by over-oxidation of an implanted Gaussian nitrogen (N) profile and investigated by conductance spectroscopy. An unexpected double peak structure is observed in the conductance spectra indicating two types of independent traps at different energy positions in the bandgap, which change their charge state with identical time constant. A theoretical model is developed assuming two independent distributions of interface traps in the bandgap of 3C-SiC with different trap parameters. The experimental G/ω-V and C-V spectra are simulated and the trap parameters are determined on the basis of this model. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

Authors with CRIS profile

Michael Krieger Chair of Applied Physics Svetlana Beljakowa Chair of Applied Physics Heiko Weber Chair of Applied Physics Gerhard Pensl Chair of Applied Physics

Involved external institutions

Acreo AB

Sweden (SE)

How to cite

APA:

Krieger, M., Beljakowa, S., Trapaidze, L., Frank, T., Weber, H.B., Pensl, G.,... Schöner, A. (2008). Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors. physica status solidi (b), 245(7), 1390-1395. https://dx.doi.org/10.1002/pssb.200844062

MLA:

Krieger, Michael, et al. "Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors." physica status solidi (b) 245.7 (2008): 1390-1395.

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