High field transport in the inversion layer of amorphous silicon thin film transistors

Hundhausen M, Ley L (1996)


Publication Type: Journal article

Publication year: 1996

Journal

Publisher: Elsevier

Book Volume: 198-200

Pages Range: 230

DOI: 10.1016/0022-3093(95)00718-0

Abstract

The temperature and field dependence of the channel conductivity of a short-channel amorphous silicon thin film transistor were measured. The data are analyzed in the framework of the effective temperature model in which it is assumed that the transport properties depend only on an effective temperature that is calculated from the electric field and temperature. It is found that this model has to be refined in order to take into account the energy dependence of the localization length of the conduction band tail states and the field dependence of the dimensionless factor entering the formula for the effective temperature.

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How to cite

APA:

Hundhausen, M., & Ley, L. (1996). High field transport in the inversion layer of amorphous silicon thin film transistors. Journal of Non-Crystalline Solids, 198-200, 230. https://dx.doi.org/10.1016/0022-3093(95)00718-0

MLA:

Hundhausen, Martin, and Lothar Ley. "High field transport in the inversion layer of amorphous silicon thin film transistors." Journal of Non-Crystalline Solids 198-200 (1996): 230.

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