Prof. Dr. Heiko B. Weber

Thomson Researcher ID: D-2654-2012
Scopus Author ID: 7403096923

Awards / Honours

Project lead
1 of 2

Monolithic electronic circuits based on epitaxial graphene
Third party funded individual grant

Graphene and Organic Molecules: Transport Experiments (B08)
Third Party Funds Group - Sub project

Graphene on SiC: Fabrication, electronic structure and transistor applications
Third party funded individual grant
(01/07/2007 - 30/06/2010)

Publications (Download BibTeX)
1 of 4

Other publication type (Online publication)
Niesner D, Hauck M, Shrestha S, et al. (2017)
Spin-split bands cause the indirect band gap of (CH3NH3)PbI3: Experimental evidence from circular photogalvanic e ect
Condensed Matter > Materials Science

Journal article
Kißlinger F, Ott C, Weber HB (2017)
Origin of nonsaturating linear magnetoresistivity
Physical Review B

Journal article
Kißlinger F, Popp M, Jobst J, et al. (2017)
Charge-carrier transport in large-area epitaxial graphene
Annalen Der Physik

Journal article
Higuchi T, Heide C, Ullmann K, et al. (2017)
Light-field-driven currents in graphene

Journal article
Shallcross S, Sharma S, Weber HB (2017)
Anomalous Dirac point transport due to extended defects in bilayer graphene
Nature Communications

Journal article
Leitherer S, Brana Coto P, Ullmann K, et al. (2017)
Charge Transport in C60-based Single-Molecule Junctions with Graphene Electrodes

Journal article
Santamaría-Botello G, Garcia Munoz LE, Sedlmeir F, et al. (2016)
Maximization of the optical intra-cavity power of whispering-gallery mode resonators via coupling prism
Optics Express

Journal article
Sledziewski T, Vivona M, Alassaad K, et al. (2016)
Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition
Journal of Applied Physics

Journal article
Krieger M, Rühl M, Sledziewski T, et al. (2016)
Doping of 4H-SiC with group IV elements
Materials Science Forum

Journal article
Sledziewski T, Weber HB, Krieger M (2016)
Passivation and generation of states at P-implanted thermally grown and deposited n-type 4H-SiC / SiO2 interfaces
Materials Science Forum

Journal article
Higuchi T, Heide C, Ullmann K, et al. (2016)
Light-field driven currents in graphene

Journal article
Pobegen G, Weiße J, Hauck M, et al. (2016)
On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs
Materials Science Forum

Journal article
Caridad JM, Connaughton S, Ott C, et al. (2016)
An electrical analogy to Mie scattering
Nature Communications

Journal article
Kißlinger F, Ott C, Heide C, et al. (2015)
Linear magnetoresistance in mosaic-like bilayer graphene
Nature Physics

Journal article
Kolesnik-Gray M, Sorger C, Biswas S, et al. (2015)
In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices
Applied Physics Letters

Journal article
Kautz J, Jobst J, Sorger C, et al. (2015)
Low-Energy Electron Potentiometry: Contactless Imaging of Charge Transport on the Nanoscale
Scientific Reports

Journal article
Sorger C, Hertel S, Jobst J, et al. (2015)
Gateless patterning of epitaxial graphene by local intercalation

Journal article
Ullmann K, Brana Coto P, Leitherer S, et al. (2015)
Single-Molecule Junctions with Epitaxial Graphene Nanoelectrodes
Nano Letters

Journal article
Sorger C, Preu S, Schmidt J, et al. (2015)
Terahertz response of patterned epitaxial graphene
New Journal of Physics

Journal article
Beljakowa S, Hauck M, Bockstedte MG, et al. (2014)
Persistent Conductivity in n-type 3C-SiC Observed at Low Temperatures
Materials Science Forum

Share link Get in contact
Last updated on 2017-10-01 at 14:31
PDF downloaded successfully