Simulation of Carrier Injection Efficiency in AlGaN-based UV-light-emitting Diodes
Hofmann G, Muhin A, Susilo N, Römer F, Wernicke T, Kneissl M, Witzigmann B (2024)
Publication Type: Journal article
Publication year: 2024
Journal
Pages Range: 1-8
DOI: 10.1109/JPHOT.2024.3430488
Abstract
Numerical simulations of carrier transport in aluminium gallium nitride based ultraviolet light emitting diodes (UV-LED) are performed in order to understand injection efficiency for light sources in the deep ultraviolet. With our simulator, calibrated with experimental data from a 265 nm UV-LED, quantum efficiencies have been analyzed. The maximum internal quantum efficiency (IQE) of 30% consists of the product from radiative recombination efficiency (RRE) of 60% and carrier injection efficiency (CIE) of 50%. It is found that poor hole injection into the active region and a surplus of electrons limit both efficiencies, and leads to significant electron leakage into the p-side. This leakage is bias dependent, and has a minimum at maximum IQE. Further simulations show that distributed polarization doping (DPD) could improve carrier injection efficiency.
Authors with CRIS profile
Gregor Hofmann
Lehrstuhl für Optoelektronik
Friedhard Römer
Lehrstuhl für Optoelektronik
Bernd Witzigmann
Lehrstuhl für Optoelektronik
Additional Organisation(s)
Involved external institutions
Germany (DE)How to cite
APA:
Hofmann, G., Muhin, A., Susilo, N., Römer, F., Wernicke, T., Kneissl, M., & Witzigmann, B. (2024). Simulation of Carrier Injection Efficiency in AlGaN-based UV-light-emitting Diodes. IEEE Photonics Journal, 1-8. https://doi.org/10.1109/JPHOT.2024.3430488
MLA:
Hofmann, Gregor, et al. "Simulation of Carrier Injection Efficiency in AlGaN-based UV-light-emitting Diodes." IEEE Photonics Journal (2024): 1-8.
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