A 200 - 325 GHz Gain-Boosted J-Band Low-Noise Amplifier in a 130 nm SiGe BiCMOS Technology
Koch M, Breun S, Weigel R (2024)
Publication Language: English
Publication Type: Conference contribution, Conference Contribution
Publication year: 2024
Event location: San Antonio
DOI: 10.1109/SiRF59913.2024.10438562
Abstract
This paper presents a wideband low-noise amplifier covering the complete J-Band up to the band edge of 325 GHz. A peak gain of 17.4 dB is achieved by a four-stage cascode-based prototype using inductive and capacitive gain boosting techniques. It is manufactured in a 130 nm SiGe BiCMOS technology with ft/fmax of 350 GHz/450 GHz, respectively. Zero-Ohm lines are applied to bias the amplifier and low-loss Marchand baluns facilitate single-ended measurements. At both edges of the measured frequency range, a gain of at least 17 dB is shown, while a minimum gain of 12.1 dB is reported. Simulations predict a noise figure of 13.1 dB to 17.2 dB and an input-referred compression point better than −23 dBm, making the amplifier suitable for sub-terahertz radar and wireless communication within IEEE 802.15.3d frequency bands. A core chip area of 250×230μ m2 and a DC power of 162 mW are required.
Authors with CRIS profile
Manuel Koch
Lehrstuhl für Technische Elektronik
Sascha Breun
Lehrstuhl für Technische Elektronik
Robert Weigel
Lehrstuhl für Technische Elektronik
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Related research project(s)
How to cite
APA:
Koch, M., Breun, S., & Weigel, R. (2024). A 200 - 325 GHz Gain-Boosted J-Band Low-Noise Amplifier in a 130 nm SiGe BiCMOS Technology. In Proceedings of the Radio Wireless Week. San Antonio, US.
MLA:
Koch, Manuel, Sascha Breun, and Robert Weigel. "A 200 - 325 GHz Gain-Boosted J-Band Low-Noise Amplifier in a 130 nm SiGe BiCMOS Technology." Proceedings of the Radio Wireless Week, San Antonio 2024.
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