A 200 - 325 GHz Gain-Boosted J-Band Low-Noise Amplifier in a 130 nm SiGe BiCMOS Technology
Koch M, Breun S, Weigel R (2024)
Publication Language: English
Publication Type: Conference contribution, Conference Contribution
Publication year: 2024
Event location: San Antonio
DOI: 10.1109/SiRF59913.2024.10438562
Abstract
This paper presents a wideband low-noise amplifier covering the complete J-Band up to the band edge of 325 GHz. A peak gain of 17.4 dB is achieved by a four-stage cascode-based prototype using inductive and capacitive gain boosting techniques. It is manufactured in a 130 nm SiGe BiCMOS technology with ft/fmax of 350 GHz/450 GHz, respectively. Zero-Ohm lines are applied to bias the amplifier and low-loss Marchand baluns facilitate single-ended measurements. At both edges of the measured frequency range, a gain of at least 17 dB is shown, while a minimum gain of 12.1 dB is reported. Simulations predict a noise figure of 13.1 dB to 17.2 dB and an input-referred compression point better than −23 dBm, making the amplifier suitable for sub-terahertz radar and wireless communication within IEEE 802.15.3d frequency bands. A core chip area of 250×230μ m2 and a DC power of 162 mW are required.
Authors with CRIS profile
Manuel Koch
Lehrstuhl für Technische Elektronik (LTE)
Sascha Breun
Lehrstuhl für Technische Elektronik (LTE)
Robert Weigel
Lehrstuhl für Technische Elektronik (LTE)
Additional Organisation(s)
Related research project(s)
How to cite
APA:
Koch, M., Breun, S., & Weigel, R. (2024). A 200 - 325 GHz Gain-Boosted J-Band Low-Noise Amplifier in a 130 nm SiGe BiCMOS Technology. In Proceedings of the Radio Wireless Week. San Antonio, US.
MLA:
Koch, Manuel, Sascha Breun, and Robert Weigel. "A 200 - 325 GHz Gain-Boosted J-Band Low-Noise Amplifier in a 130 nm SiGe BiCMOS Technology." Proceedings of the Radio Wireless Week, San Antonio 2024.
BibTeX: Download