A 3-Stacked 10.2 dBm OP1dB D-Band Power Amplifier in 22 nm FDSOI for 6G Communication
Huang T, Engelmann A, Hetterle P, Probst F, Weigel R (2023)
Publication Language: English
Publication Type: Conference contribution, Conference Contribution
Publication year: 2023
Event location: Taipei
DOI: 10.1109/APMC57107.2023.10439861
Abstract
This paper proposes a high-linearity 3-stacked D-band power amplifier (PA) for 6G communication. The PA is fabricated in 22 nm fully-depleted silicon-on-insulator (FDSOI) CMOS technology and consists of four stages, including three driver stages. The capacitive neutralization approach is adopted in all stages for gain-boosting. Transistor stacking is applied in the output stage for high output power and linearity. The circuit achieves a peak power gain of 23.8 dB at 135 GHz with a 3-dB bandwidth of 16 GHz. A maximum measured output power of 13 dBm, an output referred 1-dB compression point OP1dB of 10.2 dBm, and a peak power-added efficiency (PAE) of 9.9% are attained, while occupying only 0.081 mm² of chip area.
Authors with CRIS profile
Tianzhu Huang
Lehrstuhl für Technische Elektronik
Andre Engelmann
Lehrstuhl für Technische Elektronik
Philip Hetterle
Lehrstuhl für Technische Elektronik
Florian Probst
Lehrstuhl für Technische Elektronik
Robert Weigel
Lehrstuhl für Technische Elektronik
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How to cite
APA:
Huang, T., Engelmann, A., Hetterle, P., Probst, F., & Weigel, R. (2023). A 3-Stacked 10.2 dBm OP1dB D-Band Power Amplifier in 22 nm FDSOI for 6G Communication. In Proceedings of the 2023 Asia-Pacific Microwave Conference. Taipei, TW.
MLA:
Huang, Tianzhu, et al. "A 3-Stacked 10.2 dBm OP1dB D-Band Power Amplifier in 22 nm FDSOI for 6G Communication." Proceedings of the 2023 Asia-Pacific Microwave Conference, Taipei 2023.
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